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DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor

  • Published:2016-04 Issue: Volume:92 Page:224-231
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Nigam Kaushal,Kondekar Pravin,Sharma Dheeraj

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. The international technology roadmap for semiconductors, http://www.itrs.net.

2. Universality of short-channel effects in undoped-body silicon nanowire MOSFETs;Bangsaruntip;IEEE Electron Device Lett.,2010

3. Short-channel effect in fully-depleted SOI MOSFETs;Young;IEEE Trans. Electron Devices,1989

4. FinFETs and Other Multi-transistors;Colinge,2008

5. Double gate tunnel FET with high-k gate dielectric;Boucart;IEEE Trans. Electron Devices,2007

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