Growth mechanism, field emission and photoluminescence property of Ge-doped hexagonal cone-shaped GaN nanorods-Reference-Cited by-同舟云学术

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Growth mechanism, field emission and photoluminescence property of Ge-doped hexagonal cone-shaped GaN nanorods

Published:2018-10 Issue: Volume:122 Page:404-409
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Li Enling,Zhao Binyue,Lv Shitao,Cui Zhen,Ma Deming,Li Meiqin

Funder

National Natural Science Foundation of China

Natural Science Key Project Foundation of Shaanxi Province, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Formation of GaN self-organized nanotips by reactive ion etching;Yoshida;Jpn. J. Appl. Phys.,2001

2. Field emission enhancement from patterned gallium nitride nanowires;Ng;Nanotechnology,2007

3. One-dimensional gallium nitride micro/nanostructures synthesized by a space-confined growth technique;Xiang;Appl. Phys. A,2007

4. Preparation of grass-like GaN nanostructures: its PL and excellent field emission properties;Nabi;Mater. Lett.,2012

5. Needlelike bicrystalline GaN nanowires with excellent field emission properties;Liu;J. Phys. Chem. B,2005

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