Author:
Cheng Yang,Liu Jianping,Zhang Liqun,Jiang Desheng,Tian Aiqin,Zhang Feng,Feng Meixin,Wen Pengyan,Zhou Wei,Zhang Shuming,Ikeda Masao,Li Deyao,Yang Hui
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Chinese Academy of Sciences
CPSF-CAS Joint Foundation
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN: Mg cladding layer;Tian;Phys. status solidi C.,2016
2. GaN-based green laser diodes;Jiang;J. Semicond.,2016
3. Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region;Liu;Appl. Phys. Express,2014
4. Long-lifetime true green laser diodes with output power over 50 mW above 525 nm grown on semipolar {2021} GaN substrates;Yanashima;Appl. Phys. Express,2012
5. Gallium indium nitride-based green lasers;Sizov;J. Light. Technol.,2012
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