Photoluminescence and magneto-optical properties of multilayered type-II ZnTe/ZnSe quantum dots
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Spatially indirect excitons in type-II quantum dots
2. Optical Aharonov-Bohm effect in stacked type-II quantum dots
3. Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
4. Coexistence of type-I and type-II band lineups in Cd(Te,Se)∕ZnSe quantum-dot structures
5. Low resistance tunnel junctions with type-II heterostructures
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1. Ab-initio Study of Vibrational Properties of the Most Stable ZnTe Nanoclusters;Indian Journal of Pure & Applied Physics;2024
2. Vertical correlation and miniband formation in submonolayer Zn(Cd)Te/ZnCdSe type-II quantum dots for intermediate band solar cell application;Applied Physics Letters;2013-10-28
3. Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth;Journal of Electronic Materials;2013-09-04
4. Enhancement and narrowing of the Aharonov-Bohm oscillations due to built-in electric field in stacked type-II ZnTe/ZnSe quantum dots: Spectral analysis;Physical Review B;2012-10-11
5. Determination of excitonic size with sub-nanometer precision via excitonic Aharonov-Bohm effect in type-II quantum dots;Applied Physics Letters;2012-05-21
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