Optical and transport properties of single quantum well structure with digital alloy barriers-Reference-Cited by-同舟云学术

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Optical and transport properties of single quantum well structure with digital alloy barriers

Published:2009-10 Issue:4 Volume:46 Page:603-610
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Klymenko M.V.,Lysak V.V.,Sukhoivanov I.A.,Shulika A.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

2. Photoluminescence investigation of the carrier confining properties of multiquantum barriers

3. 150 mW fundamental-transverse-mode operation of 670 nm window laser diode

4. Wide Graded Potantial Wells;Gossard,1994

5. Electron reflectance of multiquantum barrier (MQB)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Properties of Ultrathin InGaN/GaN Quantum Wells Subject to Indium Surface Segregation;Springer Series in Optical Sciences;2015-09-12

2. Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells;Proceedings of SPIE;2012

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