Electric fields in nonhomogeneously doped silicon. Summary of simulations-Reference-Cited by-同舟云学术

Electric fields in nonhomogeneously doped silicon. Summary of simulations

Published:2006-11 Issue:1 Volume:568 Page:41-45
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kotov I.V.,Humanic T.J.,Nouais D.,Randel J.,Rashevsky A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. The ALICE Silicon Drift Detector system

2. Results from beam tests of large area silicon drift detectors

3. Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA 〈http://www.silvaco.com/〉 and 〈http://www.silvaco.com/products/device_simulation/atlas.html〉.

4. Progress in semiconductor drift detectors

5. Characteristics of the ALICE Silicon Drift Detector

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