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Detector performance and defect densities in CdZnTe after two-step annealing

  • Published:2019-04 Issue: Volume:923 Page:51-54
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kim Eunhye,Kim Yonghoon,Bolotnikov A.E.,James R.B.,Kim Kihyun

Funder

National Research Foundation of Korea

Korea University

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of structural defects of Cd0.9Zn0.1Te crystals grown by vertical zone melting;Journal of Alloys and Compounds;2024-10

2. Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector;Sensors and Materials;2024-01-26

3. Defects;Mechanical Properties of Semiconductors;2024

4. Achieving stable photodiode characteristics under ionizing radiation with a self-adaptive nanostructured heterojunction CNWs/CdZnTe;Carbon;2023-11

5. Evaluation of electron lifetime for Te inclusions free CdZnTe;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-10
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