Author:
La Rosa A.,Marchetto F.,Pardo J.,Donetti M.,Attili A.,Bourhaleb F.,Cirio R.,Garella M.A.,Giordanengo S.,Givehchi N.,Iliescu S.,Mazza G.,Pecka A.,Peroni C.,Pittà G.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Ionizing Radiation Effects in MOS Devices and Circuits;Ma,1989
2. Ionizing Radiation Effects in MOS Devices and Circuit;Winokur,1998
3. Design and test of a 64-channel charge measurement ASIC developed in CMOS 0.35μm technology
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Estimation of temperature impact on gamma-induced degradation parameters of N-channel MOS transistor;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-03