Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs-Reference-Cited by-同舟云学术

Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

Published:2016-07 Issue: Volume:824 Page:384-385
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Dalla Betta G.-F.,Batignani G.,Benkechkache M.A.,Bettarini S.,Casarosa G.,Comotti D.,Fabris L.,Forti F.,Grassi M.,Latreche S.,Lodola L.,Malcovati P.,Manghisoni M.,Mendicino R.,Morsani F.,Paladino A.,Pancheri L.,Paoloni E.,Ratti L.,Re V.,Rizzo G.,Traversi G.,Vacchi C.,Verzellesi G.,Xu H.

Funder

Istituto Nazionale di Fisica Nucleare

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

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2. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

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4. G.-F. Dalla Betta, et al., in: Proceedings of Science (Vertex 2013), 042, 2013.

5. The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities

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2. TCAD simulation of charge collection properties of an active edge planar p-on-n sensor for FEL applications;2021 Fourth International Conference on Microelectronics, Signals & Systems (ICMSS);2021-11-18

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4. PFM2: A 32 × 32 readout chip for the PixFEL X-ray imager demonstrator;2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD);2016-10

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