GaAs detector material made from 3-inch wafers-Reference-Cited by-同舟云学术

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GaAs detector material made from 3-inch wafers

Published:2004-09 Issue:1-2 Volume:531 Page:121-124
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Ayzenshtat G.I.,Budnitsky D.L.,Koretskaya O.B.,Novikov V.A.,Mokeev D.Y.,Okaevich L.S.,Tolbanov O.P.,Tyazhev A.V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. GaAs resistor structures for X-ray imaging detectors

2. GaAs radiation imaging detectors with an active layer thickness up to 1mm

3. GaAs detectors for medical imaging

4. The thermal stability of the working parameters of GaAs detectors

5. GaAs structures for X-ray imaging detectors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of GaAs:Cr-based Timepix detectors;Journal of Instrumentation;2018-02-16

2. On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.;Journal of Physics: Conference Series;2016-02-05

3. Performance of a Medipix3RX Spectroscopic Pixel Detector With a High Resistivity Gallium Arsenide Sensor;IEEE Transactions on Medical Imaging;2015-03

4. A photovoltaic effect in the metal–high-resistive GaAs:Cr contact;Russian Physics Journal;2012-12

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