Long term performance stability of silicon sensors

Author:

Mori R.ORCID,Betancourt C.,Kühn S.,Hauser M.,Messmer I.,Hasenfratz A.,Thomas M.,Lohwasser K.,Parzefall U.,Jakobs K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. M. Moll, RD50 Status Report 2009/2010—Radiation Hard Semiconductor Devices for Very High Luminosity Colliders, Technical Report CERN-LHCC-2012-010, LHCC-SR-004, CERN, Geneva, June 2012.

2. Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1×1016neqcm2

3. L. Altan, Untersuchung zur ladungsmultiplikation an hoch bestrahlten siliziumstreifensensoren (Ph.D. thesis), Institut für Experimentelle Kernphysik (IEKP), 2012.

4. R. Klanner, in: Proceedings of Science, (TIPP2014) 040, 2014; Presented at Technology and Instrumentation in Particle Physics (TIPP14), Amsterdam, Netherlands, 2–6 June 2014, 2014

5. Improvement of the dosimetric properties of chemical-vapor-deposited diamond films by neutron irradiation

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1. Solid State Detectors for High Radiation Environments;Particle Physics Reference Library;2020

2. Reasons for high charge collection efficiency of silicon detectors at HL-LHC fluences;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-04

3. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

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