CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC-Reference-Cited by-同舟云学术

CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC

Published:2007-10 Issue:1-2 Volume:581 Page:291-294
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Traversi Gianluca,Manghisoni Massimo,Ratti Lodovico,Re Valerio,Speziali Valeria

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Novel integrated CMOS sensor circuits;Matis;IEEE Trans. Nucl. Sci.,2004

2. Development of a super B-factory monolithic active pixel detector—the Continuous Acquisition Pixel (CAP) prototypes

3. Monolithic pixel detectors in a CMOS technology with sensor level continuous time charge amplification and shaping

4. L. Ratti, M. Manghisoni, V. Re, V. Speziali, G. Traversi, Non-standard approach to charge signal processing in CMOS MAPS for charge particle trackers, 2005 IEEE Nuclear Science Symposium Conference Record, vol. 2, October 23–29, 2005, pp. 969–973.

5. A novel monolithic active pixel detector in triple well CMOS technology with pixel level analog processing

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