Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes-Reference-Cited by-同舟云学术

Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

Published:2010-10 Issue:1 Volume:622 Page:49-58
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lange J.,Becker J.,Fretwurst E.,Klanner R.,Lindström G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. F. Gianotti, et al., hep-ph/02004087, April 2002.

2. J. Lange, Radiation damage in proton-irradiated epitaxial silicon detectors, Diploma Thesis, University of Hamburg, October 2008, DESY-THESIS-2009-022.

3. J. Lange, et al., Nucl. Instr. and Meth. A (2010), doi:10.1016/j.nima.2009.11.082.

4. Measurement of anomalously high charge collection efficiency in n+p strip detectors irradiated by up to 1016neq/cm2

5. G. Kramberger, et al., IEEE NSS Conference Record, N25-206, Orlando, USA, 2009.

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