Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes-Reference-Cited by-同舟云学术

Study of bistable defects created after high-temperature annealing in proton irradiated Si diodes

Published:2004-09 Issue:1-2 Volume:530 Page:128-133
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Creanza D.,Giordano D.,de Palma M.,Fiore L.,Manna N.,My S.,Radicci V.,Tempesta P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. M. Moll, Ph.D. Thesis, Hamburg University, 1999, DESY-THESIS-1999-040, ISSN-1435-8085.

2. Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors;Moll;Nucl. Phys. B (Proc. Suppl.),1995

3. CSEM, Swiss Center for Electronics and Microtechnology, (http://www.csem.ch).

4. D.Creanza, D.Giordano, M. de Palma, L. Fiore, N. Manna, S. My, V. Radicci, P. Tempesta, Study of the annealing effect on silicon microstrip detectors built on 〈 111〉 and 〈 100〉 substrate after 34MeV proton irradiation, Nucl. Instr. and Meth. A, (2004) these Proceedings.

5. Research Centre in Karlsruhe (Germany) (http://www.fzk.de/).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24GeV/c protons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2010-01

2. Study of the annealing effect on silicon microstrip detectors built on and substrates after proton irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-09