Degradation of SiGe HBT with reactor pulse neutron and gamma rays irradiation-Reference-Cited by-同舟云学术

Degradation of SiGe HBT with reactor pulse neutron and gamma rays irradiation

Published:2006-12 Issue:3 Volume:569 Page:810-814
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Liu Shu-huan,Lin Dong-sheng,Guo Xiao-qiang,Liu Nan-nan,Jiang Xin-biao,Zhu Guang-ning,Li Da,Wang Zhu-jun,Tang Ben-qi,Chen Wei,Zhang Wei,Zhou Hui,Shao Bei-bei,Li Jun-li

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Silicon–Germanium Heterojunction Bipolar Transistors;Cressler,2003

2. Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons

3. A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

4. Displacement damage effects, WP1 Study Report, 2002, No.15157/01/NL/PA.

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1. Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions;IEEE Access;2021

2. Displacement Effects in SiGe HBT;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24

3. Introduction;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24

4. Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{Co}}\gamma $ in SiGe HBT;IEEE Transactions on Nuclear Science;2016-04

5. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment;Microelectronics Reliability;2015-07