The Impact Ionization MOSFET (IMOS) as low-voltage optical detector-Reference-Cited by-同舟云学术

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The Impact Ionization MOSFET (IMOS) as low-voltage optical detector

Published:2010-12 Issue:2 Volume:624 Page:524-527
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Schlosser M.,Iskra P.,Abelein U.,Lange H.,Lochner H.,Sulima T.,Wiest F.,Zilbauer T.,Schmidt B.,Eisele I.,Hansch W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. An optimized avalanche photodiode

2. High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m

3. Ultralow-capacitance lateral p-i-n photodiode in a thin c-Si film

4. Geiger-mode avalanche photodiodes, history, properties and problems

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of S/D Doping Concentrations on Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP);2013 1st International Conference on Artificial Intelligence, Modelling and Simulation;2013-12

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