Comparison of proton irradiated P-channel and N-channel CCDs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. The space radiation environment for electronics
2. Radiation damage in scientific charge-coupled devices
3. Review of displacement damage effects in silicon devices
4. The effect of bulk traps in proton irradiated EEV CCDs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studying charge-trapping defects within the silicon lattice of a p-channel CCD using a single-trap ``pumping'' technique;Journal of Instrumentation;2014-12-15
2. Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204;IEEE Transactions on Nuclear Science;2014-08
3. Assessment of the performance and radiation damage effects under cryogenic temperatures of a P-channel CCD204s;SPIE Proceedings;2014-07-23
4. European Space Agency detector development for space science: present and future activities;SPIE Proceedings;2014-07-23
5. Dark signal correction for a lukecold frame-transfer CCD;Astronomy & Astrophysics;2013-12-18
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