Yield in inhomogeneous PtSi–n-Si Schottky photodetectors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode
2. Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations
3. Analysis of surface plasmon polariton enhancement in photodetection by Al—GaAs Schottky diodes
4. Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces
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3. Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes;Semiconductor Science and Technology;2016-07-15
4. Two-dimensional layered material/silicon heterojunctions for energy and optoelectronic applications;Nano Research;2016-01
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