Radiation effect on pn-SiC diode as a detector-Reference-Cited by-同舟云学术

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Radiation effect on pn-SiC diode as a detector

Published:2005-04 Issue:1-2 Volume:541 Page:213-220
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kinoshita Akimasa,Iwami Motohiro,Kobayashi Ken-ichi,Nakano Itsuo,Tanaka Reisaburo,Kamiya Tomihiro,Ohi Akihiko,Ohshima Takeshi,Fukushima Yasutaka

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. 4H-SiC MESFETs behavior after high dose irradiation

2. The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

3. Particle detectors based on semi-insulating silicon carbide

4. Investigation of 4H–SiC Schottky diodes by ion beam induced charge (IBIC) technique

5. Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the radiation hardness of vertical 4H–SiC detectors by the metal-oxide-semiconductor structure;Radiation Physics and Chemistry;2024-10

2. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12

3. Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art;IEEE Transactions on Nuclear Science;2022-04

4. Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments;EPJ Web of Conferences;2021

5. Structural and optical studies of gamma irradiated N-doped 4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-02

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