Manufacturing uniform field silicon drift detector using double boron layer

Author:

Golshani Negin,Beenakker C.I.M,Ishihara R.

Funder

FEI and Panalytical companies for the discussions

NanoNextNL, a micro and nanotechnology

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Radiation Detectors with Semiconductor Absorbers;Nuclear Electronics with Quantum Cryogenic Detectors;2022-07-29

2. High-resistance voltage dividers fabricated by thin polysilicon films in silicon drift detectors;Journal of Materials Science: Materials in Electronics;2019-02-28

3. Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors;Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices;2016-08-31

4. PureB multi-guard ring structures for detector applications;Microelectronic Engineering;2016-07

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