E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure

Author:

Franks M.ORCID,Casse G.,Mandić I.ORCID,Powell S.,Vilella E.,Vossebeld J.,Wonsak S.

Funder

Science and Technology Facilities Council

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Chapter 1: High Luminosity Large Hadron Collider HL-LHC;Apollinari,2017

2. CERN, Accelerators. URL https://home.cern/science/accelerators/high-luminosity-lhc.

3. A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology;Perić;Nucl. Instrum. Methods,2007

4. Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade;Vilella;J. Instrum.,2016

5. A review of advances in pixel detectors for experiments with high rate and radiation;Garcia-Sciveres;Rep. Prog. Phys.,2018

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance;Journal of Instrumentation;2022-12-01

2. Design and evaluation of UKRI-MPW0: An HV-CMOS prototype for high radiation tolerance;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-10

3. Study of neutron irradiation effects in Depleted CMOS detector structures;Journal of Instrumentation;2022-03-01

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