Performance of new radiation-tolerant thin planar and 3D columnar n+ on p silicon pixel sensors up to a maximum fluence of ∼5×1015 neq/cm2-Reference-Cited by-同舟云学术

Performance of new radiation-tolerant thin planar and 3D columnar n+ on p silicon pixel sensors up to a maximum fluence of ∼5×1015 neq/cm2

Published:2020-02 Issue: Volume:953 Page:163222
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Boscardin M.,Ceccarelli R.,Dalla Betta G.F.,Darbo G.,Dinardo M.E.,Giacomini G.,Menasce D.,Mendicino R.,Meschini M.,Messineo A.,Moroni L.,Rivera R.,Ronchin S.,Sultan D.M.S.,Uplegger L.,Viliani L.,Zoi I.,Zuolo D.

Funder

Horizon 2020

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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5. The geometrical dependence of radiation hardness in planar and 3D silicon detectors;DaVia;Nucl. Instrum. Methods A,2009

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5. Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors;Journal of Instrumentation;2021-10-01