Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates-Reference-Cited by-同舟云学术

Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

Published:2016-08 Issue: Volume:828 Page:46-51
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Härkönen J.,Tuovinen E.,Luukka P.,Gädda A.,Mäenpää T.,Tuominen E.,Arsenovich T.,Junkes A.,Wu X.,Li Z.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

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1. Characterisation of gamma-irradiated MCz-silicon detectors with a high-K negative oxide as field insulator;Journal of Instrumentation;2022-12-01

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3. Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator: effect of oxygen precursor on electrical properties and radiation hardness;Journal of Instrumentation;2021-05-01

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