Plasma effect in silicon charge coupled devices (CCDs)-Reference-Cited by-同舟云学术

Plasma effect in silicon charge coupled devices (CCDs)

Published:2011-02 Issue: Volume:665 Page:90-93
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Estrada J.,Molina J.,Blostein J.J.,Fernández G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

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3. Dark Energy Survey Collaboration, The Dark Energy Survey, astro-ph/0510346, 2005.

4. Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

5. Ground-based and airborne instrumentation for astronomy;Abbott,2006

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