Development of high voltage-CMOS sensors within the CERN-RD50 collaboration-Reference-Cited by-同舟云学术

Development of high voltage-CMOS sensors within the CERN-RD50 collaboration

Published:2022-07 Issue: Volume:1034 Page:166826
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Vilella E.^ORCID

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. M. Benedikt, et al., Future Circular Collider, Vol. 3: The Hadron Collider (FCC-hh), CERN-ACC-2018-0058, 2018.

2. The FEI3 readout chip for the ATLAS pixel detector;Peric;Nucl. Instrum. Methods Phys. Res. Sect. A,2006

3. H. Liu, et al. Development of a modular test system for the silicon sensor R & D of the ATLAS Upgrade, arXiv:1603.07950v4 [physics.ins-det].

4. E. Vilella, Recent depleted CMOS developments within the CERN-RD50 framework, PoS (Vertex2019) 019.

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4. Design and characterization of depleted monolithic active pixel sensors within the RD50 collaboration;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-09