Cryogenic ultra-low noise HEMT amplifiers board-Reference-Cited by-同舟云学术

Cryogenic ultra-low noise HEMT amplifiers board

Published:2015-07 Issue: Volume:787 Page:51-54
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

de la Broïse Xavier,Bounab Ayoub

Funder

European Union׳s Seventh Framework Programme for research

P2IO LabEx

French National Research Agency

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Y. Jin, CNRS/LPN, route de Nozay, 91460 Marcoussis, France.

2. Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics;Dong;Appl. Phys. Lett.,2014

3. Q. Dong, HEMT cyrogéniques à faible puisssance dissipée et à bas bruit (thesis), Université Paris-Sud, 2013.

4. Q. Dong, Y.X. Liang, A. Cavanna, U. Gennser, L. Couraud, C. Ulysse, Y. Jin, Ultra-low noise HEMTs for high-impedance and low-frequency preamplifiers: realization and characterization from 4.2K to 77K, in: Proceedings of the WOLTE 11 Conference.

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