Experimental characterization of monocrystalline Si targets implanted with Sb+ ions-Reference-Cited by-同舟云学术

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Experimental characterization of monocrystalline Si targets implanted with Sb+ ions

Published:2010-02 Issue:3 Volume:613 Page:415-418
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Labbani R.,Serrar H.,Baouni L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Ion Implantation, Science and Technology,1988

2. Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's

3. Tudor E. Jenkins, in: Semiconductor Science, Growth and Characterization Techniques, Prentice Hall International (UK) Limited, 1995, p. 85.

4. A Short Course for Engineers and Scientists;Williams,1972

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers;Scientific Reports;2020-07-17

2. Flux-dependent Epitaxial Recrystallization of Amorphized Si(111) Layers Due to Oblique Argon Ion Sputtering;Integrated Ferroelectrics;2020-02-09

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