Recent advances in the development of semiconductor detectors for very high luminosity colliders
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference5 articles.
1. 〈http://www.cern.ch/rd50〉.
2. A. Affolder, et al., Nucl. Instr. and Meth. A (2009), in press, doi:10.1016/j.nima.2009.08.005.
3. Effects of accelerated annealing on p-type silicon micro-strip detectors after very high doses of proton irradiation
4. Response to minimum ionising particles of p-type substrate silicon microstrip detectors irradiated with neutrons to LHC upgrade doses
5. Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
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1. Radiation effects in Low Gain Avalanche Detectors after hadron irradiations;Journal of Instrumentation;2015-07-10
2. Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-06
3. Modeling of electric field in silicon micro-strip detectors irradiated with neutrons and pions;Journal of Instrumentation;2014-10-30
4. Advances in Tracking Detectors;Annual Review of Nuclear and Particle Science;2011-11-23
5. Experimental Determination of the Impact Ionization Coefficients in Irradiated Silicon;IEEE Transactions on Nuclear Science;2011-08
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