TRAPPISTe pixel sensor with 2μm SOI technology

Author:

Cortina E.,Soung Yee L.,Renaux C.,Flandre D.,Martin E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A novel photodiode array structure with double-layer SiO2 isolation;Semiconductor Science and Technology;2023-07-04

2. Radiation Imaging Detectors Using SOI Technology;Synthesis Lectures on Emerging Engineering Technologies;2017-02-15

3. A Review of SOI Monolithic Active Pixel Sensors for Radiation Detection Applications;IEEE Sensors Journal;2015

4. Total dose radiation effects of hybrid bulk/SOI CMOS active pixel with buried channel SOI source follower;Microelectronics Journal;2014-04

5. Characterization of SOI monolithic detector system;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2013-12

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