Photoluminescence of deep level complexes in CdTe-Reference-Cited by-同舟云学术

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Photoluminescence of deep level complexes in CdTe

Published:2011-05 Issue: Volume:633 Page:S86-S88
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Procházka J.,Belas E.,Fesh R.,Franc J.,Hlídek P.

Funder

Ministry of Education of the Czech Republic

Grant Agency of the Czech Republic

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. The segregation of impurities and the self‐compensation problem in II‐VI compounds

2. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation

3. Properties of CdTe crystals grown by THM using Cd as the solvent

4. Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

5. Effect of Cd-annealing on the IR transmittance of CdTe wafers grown by the Bridgman method

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