Charge losses in segmented silicon sensors at the Si–SiO2 interface-Reference-Cited by-同舟云学术

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Published:2013-02 Issue: Volume:700 Page:22-39
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Poehlsen Thomas,Fretwurst Eckhart,Klanner Robert,Schuwalow Sergej,Schwandt Jörn,Zhang Jiaguo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference34 articles.

3. MOS (Metal Oxide Semiconductor) Physics and Technology;Nicollian,1982

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