A new method for directly locating single-event latchups using silicon pixel sensors in a gas detector

Author:

Li Zili,Fan Yan,Wang Zhen,Liu Jun,Sun Xiangming,Zhao Chengxin,Pei Hua,Wang Dong,Huang Guangming,Zhang Dongliang,Sun Daming,Yang Ping,Gao Chaosong,Xiao Le

Funder

National key research and development plan, China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Latchup in CMOS devices from heavy ions;Soliman;IEEE Trans. Nucl. Sci.,1983

2. The influence of VLSI technology evolution on radiation-induced latchup in space systems;Johnston;IEEE Trans. Nucl. Sci.,1996

3. Single particle-induced latchup;Bruguier;IEEE Trans. Nucl. Sci.,1996

4. Latent damage in CMOS devices from single-event latchup;Becker;IEEE Trans. Nucl. Sci.,2002

5. Catastrophic latchup in CMOS analog-to-digital converters;Miyahira;IEEE Trans. Nucl. Sci.,2001

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