Radiation hardness studies on CMOS monolithic pixel sensors-Reference-Cited by-同舟云学术

Radiation hardness studies on CMOS monolithic pixel sensors

Published:2010-12 Issue:2 Volume:624 Page:425-427
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Battaglia Marco,Bisello Dario,Contarato Devis,Denes Peter,Doering Dionisio,Giubilato Piero,Sung Kim Tae,Mattiazzo Serena,Radmilovic Velimir,Zalusky Sarah

Funder

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology

2. Direct electron imaging in electron microscopy with monolithic active pixel sensors

3. Active Pixel Sensors for electron microscopy

4. A rad-hard CMOS active pixel sensor for electron microscopy

5. CMOS pixel sensor response to low energy electrons in transmission electron microscopy

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1. Multi-scale simulations of single particle displacement damage in silicon;Acta Physica Sinica;2016

2. R&D paths of pixel detectors for vertex tracking and radiation imaging;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2013-07

3. High Speed, Radiation Hard CMOS Pixel Sensors for Transmission Electron Microscopy;Physics Procedia;2012