Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor-Reference-Cited by-同舟云学术

Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor

Published:2019-04 Issue: Volume:924 Page:14-18
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lee H.Y.,Hyun H.J.,Jeon H.B.,Jeon Jin-A,Lee H.S.,Lee M.H.,Lee M.W.,Park H.,Song S.J.

Funder

Ministry of Oceans and Fisheries, Korea

National Research Foundation of Korea (DIRAMS)

Korea government (MSIP)

National Research Foundation of Korea (NRF)

Institute for Basic Science (IBS), Korea

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

5. https://physics.nist.gov/PhysRefData/XrayMassCoef/ElemTab/z14.html.

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1. Performance test for a pixelated silicon sensor with junction field effect transistor;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-10