Characterization of the radiation-induced defects in Si detectors by carrier transport and decay transients-Reference-Cited by-同舟云学术

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Characterization of the radiation-induced defects in Si detectors by carrier transport and decay transients

Published:2007-12 Issue:1 Volume:583 Page:185-188
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Gaubas E.,Juška G.,Vaitkus J.,Fretwurst E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. E. Frewurst, Deep level transient spectroscopy, in: Presentation at RD50 Workshop on Defect Analysis in Radiation Damaged Detectors, Hamburg, 2006, 〈http://wwwiexp.desy.de/seminare/defect.analysis.workshop.august.2006.html〉.

2. G. Kramberger, Charge trapping, in: Presentation at RD50 Workshop on Defect Analysis in Radiation Damaged Detectors, Hamburg, 2006, 〈http://wwwiexp.desy.de/seminare/defect.analysis.workshop.august.2006.html〉.

3. O. Krasel, C. Gossling, J. Klaiber-Lodewigs, R. Klinenberg, M. Mass, S. Rajek, R. Wunstorf, Measurement of trapping time constants in proton-irradiated silicon pad detectors, in: Presentation at RD50 Workshop, 〈http://rd50.web.cern.ch/rd50/3rd-workshop〉.

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