p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
2. p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping
3. Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
4. Fabrication of homostructural ZnO p–n junctions
5. Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode
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1. Interplay of defects in low energy nitrogen implanted ZnO nanorods;Applied Surface Science;2021-10
2. Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review;ACS Applied Electronic Materials;2021-08-18
3. On the question of structure of ZnO thin films formed by IBAD and subsequently implanted with silver ions;Journal of Physics: Conference Series;2018-07
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