JICG CMOS transistors for reduction of total ionizing dose and single event effects in a 130 nm bulk SiGe BiCMOS technology-Reference-Cited by-同舟云学术

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JICG CMOS transistors for reduction of total ionizing dose and single event effects in a 130 nm bulk SiGe BiCMOS technology

Published:2021-01 Issue: Volume:987 Page:164832
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Sorge R.,Schmidt J.,Wipf Ch.,Reimer F.,Teply F.,Korndörfer F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Basic mechanisms and modeling of single-event upset in digital microelectronics;Dodd;IEEE Trans. Nucl. Sci.,2003

2. Effectiveness of SEL hardening strategies and the latchup domino effect;Barak;IEEE Trans. Nucl. Sci.,2012

3. Modeling and simulation of single-event effect in CMOS circuit;Suge;J. Semicond.,2015

4. Three-dimensional simulation of charge collection and multiple-bit upset in Si devices;Dodd;IEEE Trans. Nucl. Sci.,1994

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