1. Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2
2. P. R. Turner, VELO Module Production—Sensor Testing, LHCb Technical Note LHCb-2007-072, October 2006.
3. M. Lozano, et al., Comparison of Radiation Hardness p-in-n, n-in-n, n-in-p, RD50 Workshop, 2004.
4. Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors
5. A. Gureja, et al., Use of IV (current vs voltage) Scans to Track Radiation Damage in the LHCb VELO, LHCb-PUB-2011-020, December 2011.