The effect of mechanical stress on lateral-effect position-sensitive detector characteristics-Reference-Cited by-同舟云学术

The effect of mechanical stress on lateral-effect position-sensitive detector characteristics

Published:2006-07 Issue:1 Volume:563 Page:150-154
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Andersson H.A.,Mattsson C.G.,Thungström G.,Lundgren A.,Nilsson H.-E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector

2. J.F Creemer, The effect of mechanical stress on bipolar transistor characteristics, Ph.D Thesis, ISBN 90-5166-883-x, Eburon, 2002.

3. F. Fruett, The Piezojunction Effect in Silicon, its Consequences and Applications for Integrated Circuits and Sensors, Ph.D Thesis, ISBN 90-407-2226-9, Delft University Press, September 2001.

4. Measurement Systems, Application and Design;Doebelin,1990

5. Piezoresistance effect of silicon

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