Author:
Sopko V.,Sopko B.,Chren D.,Dammer J.
Funder
Grant Agency of the Czech Technical University in Prague
International Experiment R&D50-CERN
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Gamma induced trapping in Si with and without gold doping 87185;Barnes;J. Electron. Mater.,1979
2. Sopko V. et al.: Application of the PIN diode as a dosimeter for dose measurement of several radiation sources, COMO, Singapore 2010, isbn978-981-4307-52-9, pp. 140–144
3. Radiation defects in fast neutron-, electron-, and γ-irradiated silicon;Tulach;Phys. Stat. Sol. (a),1987
4. Physics of Semiconductor Devices;Sze,1969
5. Sopko V., Sopko B., Dammer J., Chren D. Measurement of energy levels in a silicon detector damaged by neutrons, 2011, JINST 6 C12020 doi:10.1088/1748-0221/6/12/C12020
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