Temperature-dependent characterizations of irradiated planar n + -in-n pixel assemblies-Reference-Cited by-同舟云学术

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Temperature-dependent characterizations of irradiated planar n + -in-n pixel assemblies

Published:2014-11 Issue: Volume:765 Page:135-139
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Klingenberg R.,Altenheiner S.,Andrzejewski M.,Dette K.,Go¨ßling C.,Rummler A.,Wizemann F.

Funder

Bundesministerium für Bildung und Forschung BMBF

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Prototype ATLAS IBL modules using the FE-I4A front-end readout chip

2. ATLAS pixel detector electronics and sensors

3. Electrical Properties of Silicon Containing Arsenic and Boron

4. Temperature dependence of the energy gap in semiconductors

5. Temperature dependence of the energy gap in semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature scaling of reverse current generated in proton irradiated silicon bulk;Journal of Instrumentation;2019-07-12

2. Power dissipation studies on planar n+-in-n pixel sensors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

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