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Characterization of GaAs mesa photodiodes with X-ray and γ-ray photons

  • Published:2014-08 Issue: Volume:756 Page:39-44
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Barnett A.M.

Funder

Electronic and Electrical Engineering, University of Sheffield, UK

Science and Technologies Facilities Council

Dept. Physics and Astronomy, University of Leicester, UK

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV;Journal of Applied Physics;2021-06-28

2. 30μm thick GaAs X-ray p+-i-n+ photodiode grown by MBE;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-12

3. Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection;Advanced Optical Materials;2019-03-25

4. Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detectors covered by LiF film for thermal neutron detection;Applied Surface Science;2018-12

5. High temperature GaAs X-ray detectors;Journal of Applied Physics;2017-12-28
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