Radiation hardness of silicon-on-insulator pixel devices-Reference-Cited by-同舟云学术

Radiation hardness of silicon-on-insulator pixel devices

Published:2019-04 Issue: Volume:924 Page:426-430
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Hara Kazuhiko,Aoyagi Wataru,Sekigawa Daisuke,Iwanami Shikie,Honda Shunsuke,Tsuboyama Toru,Arai Yasuo,Kurachi Ikuo,Miyoshi Toshinobu,Yamada Miho,Ikegami Yoichi

Funder

JSPS Grant-in-Aid for Scientific Research on Innovative Areas

VLSI Design and Education Center (VDEC), the University of Tokyo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers;Dierickx;IEEE Trans. Nucl. Sci.,1993

2. Y. Arai, High resolution SOI pixel detector, in: this article, HSTD11 and SOIPIX2017, 2017.

3. Radiation Imaging Detectors Using SOI Technology;Arai,2017

4. Radiation effects in MOS oxides;Schwank;IEEE Trans. Nucl. Sci.,2008

5. T. Behnke (ed.), et al. ILC–Technical Design Report, volume 4 Detectors.

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