Optimization of bias rail implementations for segmented silicon sensors

Author:

Schell Daniel,Dierlamm Alexander

Funder

DFG-funded Doctoral School “Karlsruhe School of Elementary and Astroparticle Physics: Science and Technology”

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. DESY Testbeam, testbeam.desy.de, (Accessed: 01-02-18).

2. Analysis of n-in-p Type Silicon Detectors for High Radiation Environment with Fast Analogue and Binary Readout Systems;Printz,2016

3. Y. Unno, et al., P-stop designs for reducing electric field strength at implant edges, in: 2008 IEEE Nuclear Science Symposium Conference Record, 2008, pp. 2507–2512.

4. Synopsys TCAD, https://www.synopsys.com/silicon/tcad.html, (Accessed: 02-01-18).

5. Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation;Unno;NIM A,2016

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