Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance-Reference-Cited by-同舟云学术

Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance

Published:2014-11 Issue: Volume:765 Page:59-63
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Fadeyev V.,Ely S.,Galloway Z.,Ngo J.,Parker C.,Sadrozinski H.F.-W.,Christophersen M.,Phlips B.F.,Pellegrini G.,Rafi J.M.,Quirion D.,Dalla Betta G.-F.,Boscardin M.,Casse G.,Gorelov I.,Hoeferkamp M.,Metcalfe J.,Seidel S.,Gaubas E.,Ceponis T.,Vaitkus J.V.

Funder

Office of Naval Research

U.S. Department of Energy

Spanish Ministry of Education and Science

Lithuanian Academy of Sciences

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. The barrel modules of the ATLAS semiconductor tracker

2. Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments

3. Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors

4. The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensors

5. M. Christophersen, V. Fadeyev, B.F. Phlips, H. F.-W. Sadrozinski, Scribing–cleaving–passivation for high energy physics silicon sensors Proceedings of Science, Vertex 2012 (2013) 20.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-09

2. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric;Solid-State Electronics;2016-02

3. Study of surface recombination on cleaved and passivated edges of Si detectors;Semiconductor Science and Technology;2016-01-26

4. Why and how pixels are becoming more and more “intelligent” (sensors—part 2);Journal of Instrumentation;2015-07-15