Photoluminescence of semiconducting zinc oxide containing rare earth ions as impurities-Reference-Cited by-同舟云学术

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Photoluminescence of semiconducting zinc oxide containing rare earth ions as impurities

Published:1990-03 Issue:1 Volume:46 Page:17-24
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kossanyi J.,Kouyate D.,Pouliquen J.,Ronfard-Haret J.C.,Valat P.,Oelkrug D.,Mammel U.,Kelly G.P.,Wilkinson F.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference28 articles.

1. Er‐doped InP and GaAs grown by metalorganic chemical vapor deposition

2. Erbium doping of molecular beam epitaxial GaAs

3. Photoluminescence optimization and characteristics of the rare‐earth element erbium implanted in GaAs, InP, and GaP

4. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

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