Defect and structure analysis of n+-, p+- and p-type porous silicon by the electron paramagnetic resonance technique-Reference-Cited by-同舟云学术

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Defect and structure analysis of n+-, p+- and p-type porous silicon by the electron paramagnetic resonance technique

Published:1993-11 Issue:1-6 Volume:57 Page:301-313
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

von Bardeleben H.J.,Ortega C.,Grosman A.,Morazzani V.,Siejka J.,Stievenard D.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference36 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Porous silicon formation: A quantum wire effect

3. Porous silicon formation mechanisms

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