Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis-Reference-Cited by-同舟云学术

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Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis

Published:1993-11 Issue:1-6 Volume:57 Page:25-27
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Hunt Tim D.,Reeson Karen J.,Gwilliam Russell M.,Homewood Kevin P.,Wilson Richard J.,Sealy Brian J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference9 articles.

1. Electronic properties of semiconducting FeSi2films

2. Summary Abstract: Semiconducting silicides as potential materials for electro-optic very large scale integrated circuit interconnects

3. Ion beam synthesis of buried α‐FeSi2and β‐FeSi2layers

4. Ion beam synthesis of α and β FeSi2 layers

5. Electronic properties of semiconducting FeSi2films

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