0.839 eV Cr-related luminescence center in GaAs:Cr
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference7 articles.
1. The “trigonal chromium” in GaAs: A new no-phonon luminescence spectroscopy at 0.84 eV
2. High-magnetic-field Zeeman spectroscopy of the 0.84-eV Cr-related emission and absorption line in GaAs(Cr): Experiment and theory
3. Cr-Related Intracenter Luminescence in GaAs: Cr
4. Proc. Intern. Symposium GaAs & Related Compounds, New Mexico;Nishino,1982
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1. Transition-Metal Impurity Luminescence in GaAs and its Application to Material Characterization;MRS Proceedings;1995
2. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993
3. A study of the Cr2+-Te complex in GaAs;Semiconductor Science and Technology;1988-03-01
4. Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs;Journal of Electronic Materials;1986-11
5. Observation of local lattice distortion induced by In doping in GaAs;Applied Physics Letters;1986-07-21
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