Studies of a high frequency hysteresis phenomenon in ZnS:Mn actfel devices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference5 articles.
1. Dependence of electroluminescence efficiency and memory effect on Mn concentration in ZnS:Mn ACTEL devices
2. The dependences of electroluminescent characteristics of ZnS:Mn thin films upon their device parameters
3. C. C. Zhu et al, in Proc. 1986 Int. Electroluminescence Workshop, Kah-Nee-Ta.
4. Thin film electroluminescent displays
5. Luminescence and conduction charge in thin-film electroluminescent devices
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1. New Electroluminescence Spectrum from Co-doped ZnS:(Mn, Si) Films Prepared by Chemical Vapor Deposition with Laser Ablation;MRS Proceedings;2004
2. Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices;Journal of Applied Physics;2001-09
3. Observation and simulation of space‐charge effects and hysteresis in ZnS:Mn ac thin‐film electroluminescent devices;Journal of Applied Physics;1994-05-15
4. Evidence of donor center involvement in ac thin film electroluminescent devices exhibiting memory;Journal of Applied Physics;1993-07-15
5. Memory effect in ZnS:Mn AC thin-film electroluminescent devices with low Mn concentration;IEEE Transactions on Electron Devices;1993-05
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